 | extended defects in semiconductors. Our main goal is to understand the
interaction of point defects with dislocations and stacking faults in
silicon and III-V semiconductors;
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| hypothetical materials – In the last few years, carbon nanotubes have
aroused great excitement due to their unique mechanical and electronic
properties. Our work in this area is to understand the role played by
“foreign” atoms in the nanotube or why only carbon makes bucky
structures and silicon does not?
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| Amorphization and crystallization of semiconductors. We have developed
computational algorithms to simulate complex processes in materials,
particularly amorphization, atomic diffusion (through the kinetic Monte
Carlo) and the interface amorphous-crystal (with > 106
atoms)
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| Materials under high pressure. Using ab initio calculation in the constant
pressure-ensemble (variable unit-cell) we are interested in explaining the
anomalous behavior of deep-levels in the material-gap when under
high-pressure.
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